Please use this identifier to cite or link to this item:
https://lib.hpu.edu.vn/handle/123456789/29817
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wong, Hei | en_US |
dc.date.accessioned | 2018-03-20T07:28:00Z | |
dc.date.available | 2018-03-20T07:28:00Z | |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 9781439849590 | en_US |
dc.identifier.isbn | 1439849595 | en_US |
dc.identifier.other | HPU1160571 | en_US |
dc.identifier.uri | https://lib.hpu.edu.vn/handle/123456789/29817 | - |
dc.description.abstract | Content: Machine generated contents note: 1.Overview of CMOS Technology. 1.1.Introduction. 1.2.MOS Transistor: A Quick Introduction to Classical Models. 1.2.1.Current-Voltage Characteristics. 1.2.2.Threshold Voltage. 1.3.Short-Channel Effects and Short-Channel Modifications. 1.3.1.Effect on I-V Characteristics. 1.3.2.Subthreshold Conduction. 1.3.3.Short-Channel Effects. 1.3.3.Threshold Voltage Roll-Off. 1.3.4.Drain-Induced Barrier Lowering (DIBL). 1.3.5.Gate Leakage Current. 1.3.5.1.Direct-Tunneling. 1.3.5.2.Fowler-Nordheim Tunneling. 1.3.5.3.Poole-Frenkel Emission and Trap-Assisted Tunneling. 1.4.Features and Uniqueness of MOS Transistor. 1.5.MOS in Deca-Nanometer. | en_US |
dc.format.extent | 242 p. | en_US |
dc.format.mimetype | application/pdf | en_US |
dc.language.iso | en | en_US |
dc.publisher | CRC Press | en_US |
dc.subject | Nano-CMOS | en_US |
dc.subject | Nano | en_US |
dc.subject | Nano technologies | en_US |
dc.title | Nano-CMOS gate dielectric engineering | en_US |
dc.type | Book | en_US |
dc.size | 10,737 KB | en_US |
dc.department | Technology | en_US |
Appears in Collections: | Technology |
Files in This Item:
File | Description | Size | Format | |
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Nano-CMOS-gate-dielectric-engineering-579.pdf Restricted Access | 10.74 MB | Adobe PDF | View/Open Request a copy |
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