| dc.description.abstract | The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps, at the nano-scale, which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics. However, working at this reduced scale can bring second order effects that degrade efficiency and reliability. This book describes methods for the characterization, modelling, and simulation prediction of these second order effects, in order to optimize performance and energy effi ciency. It also considers new uses of nano-scaled semiconductor devices. Devices and materials covered include: bulk MOSFETs, silicon-on-insulator FET devices, FinFet devices, tunnelling FETs, nanowires, quantum dots, amorphous and SiGe alloys, photodetectors and micro-machined bolometers, and CMOS process-compatible siliconin-package. Modelling and characterization methods covered include: computer-aided-design tools. classical, semi-classical, and quantum-semi-classical approaches. impact of technology processes on device modelling. measurement and extraction of basic electrical parameters. parasitic effects and de-embedding under non-conventional bias conditions. lifetime and failure mechanisms. bias temperature instability. time-dependent breakdown mechanisms. and new approaches for device characterization including magnetoconductance and magneto-tunnelling. Nano-Scaled Semiconductor Devices is a comprehensive resource for researchers in academia and industry working on electronic devices, nanotechnology and semiconductor characterization. | en_US |
