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dc.contributor.authorMohanty, Saraju P.en_US
dc.contributor.authorSrivastava, Ashok Nen_US
dc.date.accessioned2018-04-24T02:51:54Z
dc.date.available2018-04-24T02:51:54Z
dc.date.issued2016en_US
dc.identifier.isbn978-1-84919-999-5en_US
dc.identifier.isbn978-1-78561-000-4en_US
dc.identifier.otherHPU1160705en_US
dc.identifier.urihttps://lib.hpu.edu.vn/handle/123456789/30431
dc.description.abstractContinuing from volume 1, this volume outlines circuit- and system-level design approaches and issues for these devices. Topics covered include self-healing analog/RF circuits. on-chip gate delay variability measurement in scaled technology. FinFET SRAM circuits. nanoscale FinFET devices for PVT aware SRAM. low leakage variability aware CMOS logic circuits. thermal effects in MWCNT VLSI interconnects. an accurate PVT-aware statistical logic library for nano-CMOS integrated circuits. SPICEless RTL design optimization of nano-electronic digital integrated circuits. power-delay trade-off driven optimal scheduling of CDFGs during high level synthesis. green on-chip inductors for three-dimensional integrated circuits. 3D NoC - a promising alternative for tomorrow’s nano-system design. and DNA computing.en_US
dc.format.extent448 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoenen_US
dc.publisherThe Institution of Engineering and Technologyen_US
dc.subjectMetal oxide semiconductorsen_US
dc.subjectComplementaryen_US
dc.subjectDesign and constructionen_US
dc.titleNano-CMOS and post-CMOS electronics : circuits and design, Volume 2en_US
dc.typeBooken_US
dc.size15,637 KBen_US
dc.departmentTechnologyen_US


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