Please use this identifier to cite or link to this item: http://lib.hpu.edu.vn/handle/123456789/23299
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dc.contributor.authorKhan, Naumanen_US
dc.contributor.authorHassoun, Sohaen_US
dc.date.accessioned2016-09-20T02:19:50Z
dc.date.available2016-09-20T02:19:50Z
dc.date.issued2013en_US
dc.identifier.isbn978-1-4614-5507-3en_US
dc.identifier.isbn978-1-4614-5508-0en_US
dc.identifier.otherHPU2160637en_US
dc.identifier.urihttps://lib.hpu.edu.vn/handle/123456789/23299-
dc.description.abstractThis book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits. It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks. Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.en_US
dc.format.extent81 p.en_US
dc.format.mimetypeapplication/pdf-
dc.language.isoenen_US
dc.publisherSpringer-Verlag New Yorken_US
dc.relation.ispartofseriesSpringerBriefs in Electrical and Computer Engineeringen_US
dc.subjectThrough-silicon viasen_US
dc.subjectTSVsen_US
dc.subjectIntegrated circuitsen_US
dc.subjectPower grid designen_US
dc.titleDesigning TSVs for 3D Integrated Circuitsen_US
dc.typeBooken_US
dc.size1.71 MBen_US
dc.departmentEnglish resourcesen_US
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